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MMBT2907 / MMBT2907A
MMBT2907 / MMBT2907A PNP
Version 2006-05-15 Power dissipation - Verlustleistung
2.9 0.1 0.4 3 1.30.1 1.1
Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage
PNP
250 mW SOT-23 (TO-236) 0.01 g
Type Code
1 1.9 2
2.5 max
Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC Tj TS
Grenzwerte (TA = 25C) MMBT2907 40 V 60 V 5V 250 mW 1) 600 mA -55...+150C -55...+150C MMBT2907A 60 V
Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis )
2
Kennwerte (Tj = 25C) Typ. - - - - - - - - - - - Max. - - - - - - - - 300 0.4 V 1.6 V
- IC = 0.1 mA, - VCE = 10 V - IC = 1 mA, - VCE = 10 V - IC = 10 mA, - VCE = 10 V - IC = 500 mA, - VCE = 10 V - IC = 150 mA, - VCE = 10 V - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA
MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A
hFE hFE hFE hFE hFE hFE hFE hFE hFE
2
35 75 50 100 75 100 30 50 100 - -
Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung ) MMBT2907 MMBT2907A - VCEsat - VCEsat
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
MMBT2907 / MMBT2907A Characteristics (Tj = 25C) Min. Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 150 mA, - IB = 15 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 50 V, (E open) - VCB = 50 V, Tj = 125C, (E open) Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 50 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) turn on delay time rise time turn off storage time fall time - VCC = 30 V, - VBE = 1.5 V - IC = 150 mA, - IB1 = 15mA ton td tr toff ts tf RthA - - - - - - - - - - - - < 420 K/W 1) MMBT2222 / MMBT2222A MMBT2907 = 2B MMBT2907A = 2F 45 ns 10 ns 40 ns 100 ns 80 ns 30 ns CEBO - - 30 pf CCBO - - 8 pF fT 200 MHz - - MMBT2907 MMBT2907A - ICBO - ICBO - ICBO - - - - - - 20 nA 10 nA 20 A - VBEsat - VBEsat - - - - 1.3 V 2.6 V - VCEsat - VCEsat - - - - 0.4 V 1.6 V Kennwerte (Tj = 25C) Typ. Max.
- VCC = 30 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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